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APT150GN120JDQ4
1200V, 150A, VCE(ON) = 3.2V Typical
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short cuircuit fault. Low gate charge simplifies gate drive design and minimizes losses. * 1200V Field Stop * Trench Gate: Low VCE(ON) * Easy Paralleling * Integrated Gate Resistor: Low EMI, High Reliability * RoHS Compliant
E G C
E
S
ISOTOP (R)
OT
22
7
"UL Recognized"
file # E145592
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
Maximum Ratings Symbol Parameter
VCES VGE IC1 IC2 ICM SSOA PD TJ, TSTG Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified. Ratings
1200 30 215 99 450 450A @ 1200V 625 -55 to 150 Watts C Amps
Unit
Volts
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range
Static Electrical Characteristics Symbol Characteristic / Test Conditions
V(BR)CES VGE(TH) VCE(ON) ICES IGES RG(int) Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 6mA) Gate Threshold Voltage (VCE = VGE, IC = 6mA, Tj = 25C) Collector Emitter On Voltage (VGE = 15V, IC = 150A, Tj = 25C) Collector Emitter On Voltage (VGE = 15V, IC = 150A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C) 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) 2 Gate-Emitter Leakage Current (VGE = 20V) Integrated Gate Resistor
Min
1200 5.0 1.4 -
Typ
5.8 1.7 2.08 5
Max
6.5 2.1 300 TBD 600 -
Unit
Volts
A nA
050-7627 Rev A 01-2008
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
Dynamic Characteristic
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT150GN120JDQ4
Test Conditions VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 600V IC = 150A TJ = 150C, RG = 1.0 , VGE = 15V, L = 100H, VCE= 1200V Inductive Switching (25C) VCC = 800V VGE = 15V
4 5 7
Min 450 -
Typ 9500 500 400 9.5 800 70 430
Max -
Unit
pF
V
Gate-Emitter Charge Gate-Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-On Switching Energy
nC
A 55 65 675 85 22 27 15 55 65 780 175 23 35 22 mJ ns J ns
IC = 150A RG = 1.0 7 TJ = +25C
Turn-Off Switching Energy 6 Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-On Switching Energy Turn-Off Switching Energy
4 5 6
Inductive Switching (125C) VCC = 800V VGE = 15V IC = 150A RG = 1.0 7 TJ = +125C
-
Thermal and Mechanical Characteristics Symbol Characteristic / Test Conditions
R R
JC JC
Min
2500
Typ
29.2 -
Max
0.20
Unit
C/W
Junction to Case (IGBT) Junction to Case (DIODE) Package Weight Terminals and Mounting Screws. RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
0.56 10 1.1 g in*lbf N*m Volts
WT Torque VIsolation
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages. 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to z a the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance not including gate driver impedance.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
050-7627 Rev A 01-2008
Typical Performance Curves
300
V
GE
APT150GN120JDQ4
300 6V IC, COLLECTOR CURRENT (A) 250 200 150 5V 100 50 0 4.5V 4V 5.5V 6.5V, 10 &15 V
= 15V
IC, COLLECTOR CURRENT (A)
250 200
TJ= -55C TJ= 25C
TJ= 125C TJ= 150C
150 100 50 0
0 1 2 3 4 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
0 5 10 15 20 25 30 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25C)
I = 100A C T = 25C
J
300 250
16 14 12 10 8 6 4 2 0 0
VCE = 240V VCE = 600V
IC, COLLECTOR CURRENT (A)
TJ= -55C 200 150 100 50 0
VCE = 960V
TJ= 25C TJ= 125C 0 2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
200
400 600 800 GATE CHARGE (nC) FIGURE 4, Gate charge
1000
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.5 3.0 2.5 2.0 1.5 1.0 0.5
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
4.0
3.5 3.0 2.5 2.0 1.5 1.0 0.5
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC = 300A
IC = 300A IC = 150A IC = 75A
IC = 150A
IC = 75A
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage 1.10
0
6
0 25 50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 300 250 200 150 050-7627 Rev A 01-2008 100 50 0 -50 -25
0 -50 -25
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.05 1.00 0.95 0.90 0.85 0.80 0.75 -.50 -.25 IC, DC COLLECTOR CURRENT (A)
0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature
0 25 50 75 100 125 150 TC, Case Temperature (C) FIGURE 8, DC Collector Current vs Case Temperature
Typical Performance Curves
60 50 40 30 20 10 0
VCE = 800V TJ = 25C, or 125C RG = 1.0 L = 100H
APT150GN120JDQ4
1000 td(OFF), TURN-OFF DELAY TIME (ns)
VGE =15V,TJ=125C
td(ON), TURN-ON DELAY TIME (ns)
VGE = 15V
800
600
VGE =15V,TJ=25C
400
200
VCE = 800V RG = 1.0 L = 100H
0 0 50 100 150 200 250 300 350 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 250
TJ = 125C, VGE = 15V
0 50 100 150 200 250 300 350 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current
RG = 1.0, L = 100H, VCE = 800V
400 350 300 tr, RISE TIME (ns) 250 200 150 100 50 0
TJ = 25 or 125C,VGE = 15V
200 tr, FALL TIME (ns)
150
100
TJ = 25C, VGE = 15V
50
EOFF, TURN OFF ENERGY LOSS (mJ)
0 50 100 150 200 250 300 350 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 120 Eon2, TURN ON ENERGY LOSS (mJ) 100 80 60 40 20 0
TJ = 25C
V = 800V CE V = +15V GE R = 1
G
0 50 100 150 200 250 300 350 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 50 45 40 35 30 25 20 15 10 5 0 50 100 150 200 250 300 350 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Turn-Off Energy Loss vs Collector Current 120 SWITCHING ENERGY LOSSES (mJ) 100 80 60
Eoff,300A
V = 800V CE V = +15V GE R = 1
G
0
RG = 1.0, L = 100H, VCE = 800V
V = 800V CE V = +15V GE R = 1
G
TJ = 125C
TJ = 125C
TJ = 25C
0 50 100 150 200 250 300 350 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 200 SWITCHING ENERGY LOSSES (mJ)
V = 800V CE V = +15V GE T = 125C
J
0
Eon2,300A
Eon2,300A
160
120
80
Eoff,300A Eon2,150A Eoff,150A Eon2,75A
050-7627 Rev A 01-2008
40 20 0
Eon2,150A Eoff,150A Eon2,75A Eoff,75A
40
5 10 15 20 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs Gate Resistance
0
Eoff,75A
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
Typical Performance Curves
10,000 500 450 Cies IC, COLLECTOR CURRENT (A) C, CAPACITANCE (pF) 400 350 300 250 200 150 100 50
APT150GN120JDQ4
1000
Coes 100 Cres
0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
10
0 200 400 600 800 1000 1200 1400 VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 18, Minimum Switching Safe Operating Area
0
0.25 ZJC, THERMAL IMPEDANCE (C/W) D = 0.9
0.20
0.15
0.7 0.5 0.3
Note:
0.10
PDM
t1 t2
0.05 0.1 0 10-5 0.05 10-4 SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10 -1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
50 FMAX, OPERATING FREQUENCY (kHz)
25C
40
T = 125C J T = 75C C D = 50 % V = 800V CE R = 4.7
G
30
F max = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf f max2 = Pdiss - P cond E on2 + E off TJ - T C R JC
TJ (C)
TC (C)
Dissipated Power (Watts)
ZEXT
.045 .025
.0132 .569
.022 30.75
20
75C
10
Pdiss =
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
50 100 150 200 250 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
0
0
050-7627 Rev A 01-2008
APT150GN120JDQ4
Gate Voltage 10% td(on) TJ = 125C
APT100DQ120
tr
V CC IC V CE
90%
Collector Current
5%
10%
5% Collector Voltage
A D.U.T.
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
TJ = 125C Gate Voltage
90% td(off) tf 10% Collector Voltage
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
050-7627 Rev A 01-2008
Typical Performance Curves
APT150GN120JDQ4
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS Symbol Characteristic / Test Conditions
IF(AV) IF(RMS) IFSM Maximum Average Forward Current (TC = 88C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3 ms)
All Ratings: TC = 25C unless otherwise specified. APT150GN120JRDQ4
60 73 540 Amps
Unit
STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions
IF = 75A VF Forward Voltage IF = 150A IF = 75A, TJ = 125C
Min
Type
2.7 3.4 2.1
Max
Unit
Volts
DYNAMIC CHARACTERISTICS Symbol Characteristic
trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
0.60 , THERMAL IMPEDANCE (C/W) D = 0.9
Test Conditions
IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C IF = 60A, diF/dt = -200A/s VR = 800V, TC = 25C
Min
-
Typ 60 265 560 5 350 2890 13 150 4720 40
Max
-
Unit
ns
nC Amps ns nC Amps ns nC Amps
IF = 60A, diF/dt = -200A/s VR = 800V, TC = 125C
-
IF = 60A, diF/dt = -1000A/s VR = 800V, TC = 125C
-
0.50
0.40
0.7
0.30
0.5
Note:
PDM
0.20
0.3
t1 t2
JC
0.10 0
Z
0.1 0.05 10-5 10-4
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
TJ (C)
0.148 Dissipated Power (Watts) 0.006 0.0910 0.524 0.238
TC (C)
0.174 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
050-7627 Rev A 01-2008
ZEXT
Typical Perfromance Curves
200 trr, REVERSE RECOVERY TIME (ns) 180 IF, FORWARD CURRENT (A) 160 140 120 100 80 60 40 20 0 0 TJ = 25C TJ = -55C TJ = 125C TJ = 175C 400 120A 350 300 60A 250 200 150 100 50
APT150GN120JDQ4
T = 125C J V = 800V
R
30A
1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 25. Forward Current vs. Forward Voltage 7000 Qrr, REVERSE RECOVERY CHARGE (nC)
T = 125C J V = 800V
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 26. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 50 45 40 35 30 25 20 15 10 5 0 30A 60A
T = 125C J V = 800V
R
0
6000 5000 4000 3000 2000 1000 0
R
120A
120A
60A
30A
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 27. Reverse Recovery Charge vs. Current Rate of Change 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.0 0.8 0.6 0.4 Qrr 0.2 trr IRRM Qrr trr
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Current vs. Current Rate of Change 90 80 70 60 IF(AV) (A) 50 40 30 20 10
Duty cycle = 0.5 T = 175C
J
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 29. Dynamic Parameters vs. Junction Temperature 350 CJ, JUNCTION CAPACITANCE (pF) 300 250 200 150 100 50 0
0.0
0 0 75 100 125 150 175 Case Temperature (C) Figure 30. Maximum Average Forward Current vs. CaseTemperature 25 50
050-7627 Rev A 01-2008
1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage
APT150GN120JDQ4
Vr +18V 0V D.U.T. 30H
trr/Qrr Waveform
diF /dt Adjust
APT10035LLL
PEARSON 2878 CURRENT TRANSFORMER
Figure 32, Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
0.25 IRRM
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
5
Figure 33, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
* Emitter/Anode
Collector/Cathode
* Emitter/Anode terminals are shorted internally. Current handling capability is equal for either Emitter/Anode terminal.
* Emitter/Anode ) Dimensions in Millimeters and (Inches
Gate
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7627 Rev A 01-2008

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